Overview

The ATC ORION Series Sputtering Systems feature a con-focal sputter source flange oriented at specific angles. The specially designed chimney/ground shield/shutter system allows a high degree of deposition uniformity over substrates over twice the target diameter. Typical deposition profile uniformity with SiO2 on a 3" diameter Si wafer is better than +/- 2% excluding 5 mm edge for 2" sputter source in RF mode. The con-focal geometry results in better uniformity, the ability to co-deposit alloy films and the ability to grow better ultra-thin film multilayers since the substrate is always "in the plasma."

 ORION-5-UHV Custom Sputtering System is equipped with two 2" and one 1" sputter sources. There are two Thermal Evaporation Sources mounted in the chamber. To control and calibrate sputter deposition rate a Quartz Crystal Thickness Monitor is installed. Substrate RF Bias can be applied for the pre-cleaning of substrate. Load-Lock chamber is used for substrate loading to prevent the main-chamber contamination and to reduce substrate load time. Substrate can be heated up to 850 C by the radiant heater.

Technology:
Thin Film Sputtering
Sputtering is a technique used to deposit thin films of a material onto a surface (a.k.a. "substrate"). By first creating a gaseous plasma and then accelerating the ions from this plasma into some source material (a.k.a. "target"), the source material is eroded by the arriving ions via energy transfer and is ejected in the form of neutral particles - either individual atoms, clusters of atoms or molecules. As these neutral particles are ejected they will travel in a straight line unless they come into contact with something - other particles or a nearby surface. If a "substrate" such as a Si wafer is placed in the path of these ejected particles it will be coated by a thin film of the source material.
 

 

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Location:

MSSI, UL